| PART |
Description |
Maker |
| HB56UW3272ETK-5F HB56UW3272ETK-6F HB56UW3272ETK-F |
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
256MB Buffered EDO DRAM DIMM 32-Mword 隆驴 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M 隆驴 4 components)
|
Elpida Memory
|
| HB56UW873E-5F HB56UW873E-6F HB56UW873E-F |
64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)
64MB Buffered EDO DRAM DIMM 8-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M 隆驴 8 components)
|
Elpida Memory
|
| HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| HYM72V4015GS-60 HYM72V4015GS-50 HYM72V4005GS-50 HY |
4M x 72 Bit ECC DRAM Module buffered
4M x 72-Bit EDO-DRAM Module (ECC - Module)
4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| EBS25EC8APFA-7A EBS25EC8APFA EBS25EC8APFA-75 |
256MB Unbuffered SDRAM DIMM 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
| AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc.
Alliance Semiconductor
|
| IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM
2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics
International Business Machines, Corp.
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| HM5165405F HM5164405F |
64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
|
Hitachi,Ltd.
|
